2SJ667 no.8248-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. ? motor drive, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --100 v gate-to-source voltage v gss 20 v drain current (dc) i d --42 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --168 a allowable power dissipation p d 2.5 w tc=25 c 100 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 58 mj avalanche current *2 i av --42 a note : * 1 v dd =30v, l=50 m h, i av =--42a * 2 l 50 m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --100 v zero-gate voltage drain current i dss v ds =--100v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--21a 22 37 s static drain-to-source on-state resistance r ds (on)1 i d =--21a, v gs =--10v 42 56 m w r ds (on)2 i d =--21a, v gs =--4v 52 74 m w marking : j667 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8248 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 31005qa ts im tb-00001248 2SJ667 p-channel silicon mosfet general-purpose switching device applications
2SJ667 no.8248-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =--20v, f=1mhz 6350 pf output capacitance coss v ds =--20v, f=1mhz 430 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 250 pf turn-on delay time t d (on) see specified test circuit. 47 ns rise time t r see specified test circuit. 360 ns turn-off delay time t d (off) see specified test circuit. 480 ns fall time t f see specified test circuit. 220 ns total gate charge qg v ds =--50v, v gs =--10v, i d =--42a 110 nc gate-to-source charge qgs v ds =--50v, v gs =--10v, i d =--42a 20 nc gate-to-drain miller charge qgd v ds =--50v, v gs =--10v, i d =--42a 20 nc diode forward voltage v sd i s =--42a, v gs =0 --1.05 --1.2 v package dimensions unit : mm 2056a switching time test circuit avalanche resistance test circuit 1 : gate 2 : drain 3 : source sanyo : to-3pb 15.6 2.6 3.5 1.2 14.0 1.6 1.0 2.0 0.6 20.0 20.0 15.0 1.3 3.2 4.8 2.0 0.6 5.45 5.45 1.4 1 2 3 pw=10 m s d.c. 1% p. g 50 w g s d i d = --21a r l =2.38 w v dd = --50v v out 2SJ667 v in 0v --10v v in 50 w 0v --10v 3 50 w rg v dd l 2SJ667
2SJ667 no.8248-3/4 r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs ciss, coss, crss -- v ds i f -- v sd ? y fs ? -- i d sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v forward current, i f -- a it08812 it08813 it08810 it08811 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 0 0 --10 --20 --30 --80 --70 --60 --50 --40 0 --10 --20 --30 --80 --70 --60 --50 --40 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 1000 100 10000 it08817 it08815 it08814 3 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --2 --10 0 60 80 100 120 40 20 0 60 80 100 40 20 50 70 90 30 10 --1.5 --1.0 --0.5 --2.0 --2.5 --3.0 0 --5.0 --4.5 --4.0 --3.5 0 25 50 75 100 125 7 5 2 3 7 5 --6v tc= 25 c 25 c --25 c 25 c tc= --25 c 75 c tc= 75 c i d = --21a tc=75 c 25 c -- 25 c i d = --21a, v gs = --4v i d = --21a, v gs = --10v f=1mhz coss ciss crss it08816 --0.1 --1.0 23 57 23 57 23 5 --10 100 1000 3 5 7 2 2 3 5 7 t d (off) t d (on) t r v dd = --50v v gs = --10v v gs = -- 3v -- 4v v ds = --10v t f --10v --0.1 --1.0 23 57 3 10 100 1.0 --1.5 --1.2 --0.6 --0.3 --0.9 0 --0.01 --0.1 --1.0 --10 --100 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 7 5 7 2 3 5 7 2 --10 --100 23 57 7 35 2 tc= --25 c 75 c 25 c v ds = --10v tc= 75 c 25 c -- 25 c v gs =0
2SJ667 no.8248-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2005. specifications and information herein are subject to change without notice. p d -- ta a s o v gs -- qg p d -- tc total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a case temperature, tc -- c allowable power dissipation, p d -- w ambient temperature, ta -- c allowable power dissipation, p d -- w it08821 it08819 --0.1 --1.0 --10 --100 2 3 3 5 7 2 2 3 5 7 2 3 5 7 23 57 23 57 23 57 --1.0 --0.1 --10 2 --100 i dp = --168a i d = --42a 100 m s 10 m s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). it08818 0204060 110 80 100 10 30 50 70 90 0 -- 2 -- 4 -- 6 -- 8 -- 9 -- 1 -- 3 -- 5 -- 7 --10 v ds = --50v i d = --42a it08820 0 0 20 40 60 80 100 120 120 100 80 140 160 60 40 20 0 0 20 40 60 80 100 120 3.0 2.5 2.0 140 160 1.5 1.0 0.5 <10 m s tc=25 c single pulse
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